Low-arsenic metal modulated epitaxy produced smooth and gap-free (001) planar growth up to the gate. The resulting self-aligned field effect transistors (FETs) were dominated by FET channel re-sistance rather than source–drain access resistance. Higher As 2 fluxes led first to conformal growth. The device in (a) is representative of a FinFET while (b) is representative of a Tri-Gate FET and (c) is a planar FET device. The FinFET includes a spacer at the top of the fin and is considered a dual-gated device with a gate on two sides of the channel. Figure 2 — Comparing the electrical characteristics of a planar FET to that of a FinFET (sub-threshold current). Parasitic resistance and capacitance represent another challenging area for the custom designer. As the device shrinks further on the horizontal plane, and at the same time “rises” in the z-axis dimension, new coupling to.
- A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal-oxide-semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, forming a double gate structure. These devices have.
- A lot has been written on SemiWiki about FinFETS, it is one of the top trending search terms, but there is some confusion about the process naming so let me attempt to explain. In planar process technologies the 28nm or 20nm implies the minimum transistor gate length of 28nm or 20nm.
The planar transistor was invented by Jean Hoerni in 1959. The design of the planar transistor improved on earlier designs by making them cheaper to make, mass-producible, and better at amplifying electrical input. The planar transistor is built in layers and can have all of its connections in the same plane.
The first layer in a planar transistor is a base of semiconductor material. Many impurities are added to this base that allow it to be a better conductor. A second layer of semiconductor, with fewer impurities, is then put on top of the base. After the second layer is in place, the center of it is etched out, leaving thick edges of the second material around the sides and a thin layer above the base, in the shape of a square bowl.
A section of material of the opposite polarity than the initial two layers is then placed in the bowl. Once again, the center of this layer is etched away forming a smaller bowl. A material similar to the first layer of the planar transistor is then added. The second, third and fourth layers are all made flush with the top of the transistor.
The positive and negative components of the planar semiconductor are accessed on the same plane of the device. Metal connectors can be attached to the transistor after the components are in place, allowing the device to receive and emit electricity. The transistor receives input from the first layer and emits output from the fourth. The third layer is used to run a charge into the transistor so that it can amplify input.
Though the design of the device is a bit more complicated than earlier transistors, many planar transistors can be made at the same time. This decreases the amount of time and, subsequently, money needed to produce transistors and has helped paved the way for more affordable electronics. These types of transistors can also boost input to higher levels than earlier models of transistors.
In earlier transistors, the oxide layer that naturally forms on the suface of the semiconductor was removed from the transistor to prevent contamination. This meant that the delicate junctions between the positive and negative sections of the transistor had to be exposed. Constructing the transistor in layers, as Hoerni’s design called for, incorporated the oxide layer as a protective feature for the junctions.
Planar Fettuccine
1planar FET
Большой англо-русский и русско-английский словарь >planar FET
2planar FET
Англо-русский словарь технических терминов >planar FET
3planar FET
Универсальный англо-русский словарь >planar FET
4planar FET
English-Russian electronics dictionary >planar FET
5planar FET
The New English-Russian Dictionary of Radio-electronics >planar FET
6planar fet
English-Russian dictionary of electronics >planar fet
7планарный полевой транзистор
Большой англо-русский и русско-английский словарь >планарный полевой транзистор
8планарный полевой транзистор
Англо-русский словарь технических терминов >планарный полевой транзистор
См. также в других словарях:
Planar Fete
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