Cs150n03 Mosfet

OptiMOSTM Power-MOSFET, 30 V BSC011N03LS Final Data Sheet Rev. 2.4, 2020-03-13 1 Maximum ratings at Tj=25 °C, unless otherwise specified Table 2 Maximum ratings Values Min. Parameter Symbol Unit Note / Test Condition Continuous drain current1) I D-230 146 204 129 37 A VGS=10 V, TC=25 °C VGS=10 V, TC=100 °C VGS=4.5 V, TC=25 °C. Silicon N-Channel Power MOSFET General Description： CS180N06 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system. Basic Electronics - MOSFET - FETs have a few disadvantages like high drain resistance, moderate input impedance and slower operation. To overcome these disadvantages, the MOSFET which is an.

Type Designator: CS150N03A8

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 150 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 75 nC

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 940 pF

Cs150n03 Mosfet Diagram

Maximum Drain-Source On-State Resistance (Rds): 0.0035 Ohm

Package: TO-220AB

CS150N03A8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

Cs150n03 Mosfet Power Supply

CS150N03A8 Datasheet (PDF)

0.1. cs150n03a8.pdf Size:1281K _wuxi_china

Silicon N-Channel Power MOSFET R CS150N03 A8 General Description VDSS 30 V CS150N03 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

6.1. cs150n03 a8.pdf Size:390K _crhj

7.1. cs150n04 a8.pdf Size:169K _crhj

Silicon N-Channel Power MOSFET R CS150N04 A8 General Description VDSS 40 V CS150N04 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 4 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc

7.2. cs150n04a8.pdf Size:200K _wuxi_china

Cs150n03 Mosfet Wiring

Datasheet: CS12N65FA9H, CS138, CS13N15D, CS13N50A8H, CS13N50FA9H, CS1405, CS140N10A, CS150, TPC8107, CS150N04A8, CS15N60, CS16N60A8H, CS19N40A8H, CS19N40AN, CS1N50A1, CS1N60A1H, CS1N60A3H.

Cs150n03 Mosfet Switch

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